PART |
Description |
Maker |
HL7851G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
SLD105VL |
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE 798 nm, LASER DIODE High Power Density 1W Laser Diode
|
SONY
|
LNC704PS |
GaAlAs Semiconductor Laser
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode 798 nm, LASER DIODE M-272, 12 PIN
|
SONY NXP Semiconductors N.V.
|
NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
DL-3150-101 DL-3150-102 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
TSAL7300 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package GaAs/GaAlAs IR Emitting Diode in ? 5 mm (T?1 3/4)Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken VISAY[Vishay Siliconix]
|